Materials science forum · 2012 · 39 citations · 9 references
Materials EngineeringMaterials ScienceScrew DislocationEngineeringDislocation InteractionSolution GrowthConversion ProcessCrystal Growth TechnologyMechanical EngineeringApplied PhysicsSolid MechanicsCarbideConversion MechanismStructural CeramicDefect FormationCrystallographyMechanics Of MaterialsMicrostructure
Solution growth is considered to be a powerful method for high quality SiC crystals. This work reports that the conversion process from a threading screw dislocation into a few Frank partial dislocations in basal planes was investigated by synchrotron X-ray topography. This process was effectively assisted by step-flow growth on off-oriented (0001) seed crystals. The Frank partials were not extended into the crystal grown toward the [0001] direction perpendicular to the basal plane. Thus, the conclusion of this study suggests the use of off-oriented seed crystal is important to improve crystal quality.
9
Structure of the carrot defect in 4H-SiC epitaxial layers
Mourad Benamara, Xuan Zhang, Marek Skowroński et al. · Applied Physics Letters · 2005 · 94 citations
Michael Dudley, Fangzhen Wu, H. Wang et al. · Applied Physics Letters · 2011 · 64 citations
Cross-sectional structure of carrot defects in 4H–SiC epilayers
Xuan Zhang, S. Ha, Mourad Benamara et al. · Applied Physics Letters · 2004 · 43 citations
Aspects of Dislocation Behavior in SiC
Michael Dudley, Yi Chen, Xian Rong Huang et al. · Materials science forum · 2008 · 25 citations