Implementation of Fermi–Dirac statistics and advanced models in PC1D for precise simulations of silicon solar cells

A unified mobility model for device simulation—I. Model equations and concentration dependence

D.B.M. Klaassen · Solid-State Electronics · 1992 · 892 citations

Engineering, Electrical Engineering, Semiconductor Devices +15

Improved quantitative description of Auger recombination in crystalline silicon

Armin Richter, Stefan W. Glunz, Florian Werner et al. · Physical Review B · 2012 · 850 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Intrinsic concentration, effective densities of states, and effective mass in silicon

Martin A. Green · Journal of Applied Physics · 1990 · 757 citations

Engineering, Materials Science, Physics +17

A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime

D.B.M. Klaassen · Solid-State Electronics · 1992 · 467 citations

Engineering, Electrical Engineering, Materials Engineering +17

General parameterization of Auger recombination in crystalline silicon

Mark Kerr, Andrés Cuevas · Journal of Applied Physics · 2002 · 443 citations

Engineering, Materials Engineering, Materials Science +15