Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design - Concepedia

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Fundamental models of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design

47

Citations

3

References

2000

Year

Roger P. Pawlowski, Constantinos Theodoropoulos, Andrew G. Salinger, T. J. Mountziaris, Harry K. Moffat, John N. Shadid, E. J. Thrush

Journal of Crystal Growth

Chemical EngineeringEngineeringReactor DesignApplied PhysicsAluminum Gallium NitrideGallium OxideFundamental ModelsGallium NitrideCategoryiii-v Semiconductor

References

	Year	Citations

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