Processes in interfacial zones during chemical vapour deposition: Aspects of kinetics, mechanisms, adhesion and substrate atom transport

Thermophoresis of particles in a heated boundary layer

L. Talbot, R.K. Cheng, Robert W. Schefer et al. · Journal of Fluid Mechanics · 1980 · 1.5K citations

Engineering, Biophysics, Physics +16

A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor

F. C. Eversteyn, P. J. Severin, C. H. J. v. d. Brekel et al. · Journal of The Electrochemical Society · 1970 · 273 citations

Engineering, Materials Engineering, Materials Science +10

Selective Low Pressure Chemical Vapor Deposition of Tungsten

E. K. Broadbent, Chuck Ramiller · Journal of The Electrochemical Society · 1984 · 220 citations

Natural Sciences, Materials Engineering, Materials Science +17

On the Reaction Mechanism of GaAs MOCVD

Jun‐ichi Nishizawa, T. Kurabayashi · Journal of The Electrochemical Society · 1983 · 202 citations

Natural Sciences, Materials Engineering, Materials Science +12

<i>Growth of Crystals from the Vapour</i>

M. M. Faktor, I. Ross Garrett, G. W. Cullen · Physics Today · 1975 · 152 citations

Natural Sciences, Chemistry, Physics +10