Fabrication of micrometer-scale structures on GaAs and GaAs/AlGaAs quantum well material using microcontact printing

Abstract

Microcontact printing (CP) was used in conjunction with self-assembled monolayers (SAMs) of hexadecanethiolates to fabricate gold etch masks on GaAs and GaAs/AlGaAs quantum-well substrates; patterns in the mask were transferred into the semiconductor with an anisotropic dry chemical-etch process. The measured luminescence efficiency of the etched features in GaAs/AlGaAs was similar to that of samples patterned using conventional lithography; this observation indicates that no mechanical or chemical damage is incurred in the CP process.