Journal of Applied Physics · 1998 · 15 citations · 5 references
Natural SciencesMaterials SciencePhysicsAtomic PhysicsCondensed Matter PhysicsSemiconductor MaterialsDefects In Electronic MaterialsNoiseNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor DefectsSemiconductor Physics1/F NoiseConductionLow-frequency NoiseNoise In Semiconductor DiodesNoise Sources In Semiconductor MaterialsSemiconductor Noise
Universal 1/f noise is shown to originate from the variations in the initial velocities of conduction electrons after collisions with defects. Defect atoms, after being struck by conduction electrons, recoil and form an impacted mass of lattice atoms. Conduction electrons emitted after a collision have an average initial velocity which steadily decreases as the impacted mass builds up. It is shown that this process yields a noise spectrum of the form f−n where n is in the vicinity of one and has an amplitude given by the Hooge empirical formula. Variations from the Hooge result are discussed. The model described applies to all semiconductors and metals.
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<i>Electrons and Holes in Semiconductors</i>
W. Shockley, E. M. Field · Physics Today · 1952 · 1K citations
Discussion of recent experiments on 1/ƒ noise
F.N. Hooge · Physica · 1972 · 243 citations