New emission line in highly excited GaN

THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN

H. Paul Maruska, J. J. Tietjen · Applied Physics Letters · 1969 · 1.3K citations

Engineering, Materials Engineering, Materials Science +14

Fundamental energy gap of GaN from photoluminescence excitation spectra

B. Ḿonemar · Physical review. B, Solid state · 1974 · 797 citations

Natural Sciences, Materials Engineering, Materials Science +17

Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers

R. Dingle, D. D. Sell, S. E. Stokowski et al. · Physical review. B, Solid state · 1971 · 526 citations

Engineering, Materials Engineering, Materials Science +17

Radiative Recombination in Highly Excited CdS

Claude Benoit à la Guillaume, Jean-Marie Debever, F. Salvan · Physical Review · 1969 · 337 citations

Natural Sciences, Physics, Optics +16

Donor-acceptor pair recombination in GaN

R. Dingle, M. Ilegems · Solid State Communications · 1971 · 262 citations

Engineering, Materials Engineering, Materials Science +9