Applied Physics Letters · 1985 · 20 citations · 15 references
SemiconductorsOrganic Charge-transfer CompoundElectrical EngineeringSemiconductor DeviceEngineeringSemiconductor TechnologyOrganic ElectronicsInp Field-effect TransistorApplied PhysicsOrganic SemiconductorOrganic ChemistrySemiconductor MaterialsSemiconductor Device FabricationChemistryGate ContactMetal-semiconductor Field-effect Transistors
We report the first organic-on-inorganic contact barrier semiconductor transistor. InP field-effect transistor similar to metal-semiconductor field-effect transistors was made by vacuum subliming a thin film of N, N′-dimethyl 3,4,9,10-perylenetetracarboxylic diimide onto Si-implanted channel, forming a gate contact. Good pinch-off characteristics and relatively small gate leakage current were obtained. The extrinsic transconductances for these devices are approximately 70–80 mS/mm, with a gate length of 1.5 μm and a channel carrier concentration in the high 1016 cm−3.
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