Morphological properties of chemical vapour deposited AlN films

Crystal structure refinement of AlN and GaN

H. Schulz, K. H. Thiemann · Solid State Communications · 1977 · 676 citations

Natural Sciences, Materials Engineering, Materials Science +12

The Use of Metalorganics in the Preparation of Semiconductor Materials

H. M. Manasevit, F. M. Erdmann, W. I. Simpson · Journal of The Electrochemical Society · 1971 · 296 citations

Engineering, Chemistry, Materials Science +12

Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

K. Hiramatsu, Shintaro Itoh, Hiroshi Amano et al. · Journal of Crystal Growth · 1991 · 296 citations

Engineering, Materials Engineering, Materials Science +12

Prospects for device implementation of wide band gap semiconductors

James H. Edgar · Journal of materials research/Pratt's guide to venture capital sources · 1992 · 229 citations

Engineering, Materials Engineering, Materials Science +14

The fundamentals of chemical vapour deposition

W. A. Bryant · Journal of Materials Science · 1977 · 211 citations

Natural Sciences, Chemical Engineering, Chemistry +11