Growth of 20 mm diameter GaAs crystals by the floating-zone technique with controlled As-vapour pressure under microgravity

A new model for the calculation of dislocation formation in semiconductor melt growth by taking into account the dynamics of plastic deformation

J. Völkl, G. Müller · Journal of Crystal Growth · 1989 · 97 citations

Natural Sciences, Materials Engineering, Materials Science +17

Selective etching and photoetching of {100} gallium arsenide in CrO3-HF aqueous solutions

J.L. Weyher, J. van de Ven · Journal of Crystal Growth · 1983 · 86 citations

Natural Sciences, Chemistry, Materials Science +14

Reactions of Gallium with Quartz and with Water Vapor, with Implications in the Synthesis of Gallium Arsenide

C. Norman Cochran, L. M. Foster · Journal of The Electrochemical Society · 1962 · 53 citations

Natural Sciences, Chemistry, Materials Science +13

Liquid bridge analysis of silicon crystal growth experiments under microgravity

A. Eyer · Journal of Crystal Growth · 1986 · 40 citations

Natural Sciences, Aerospace Engineering, Materials Science +11

Substrate-impurities effects on GaAs MESFETs

R. Anholt, T. W. Sigmon · Journal of Electronic Materials · 1988 · 23 citations

Engineering, Electrical Engineering, Materials Science +14