Publication | Closed Access
A combined carbon and oxygen segregation model for the LEC growth of SI GaAs
14
Citations
9
References
2002
Year
Oxygen Segregation ModelEngineeringPhysicsApplied PhysicsSi GaasSemiconductor MaterialSemiconductor Device FabricationOptoelectronicsCompound SemiconductorCombined CarbonSemiconductor Device
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