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High nitrogen content InGaAsN/GaAs single quantum well for 1.55μm applications grown by molecular beam epitaxy

DOI

19

Citations

11

References

2003

Year

J. S. Wang, A. R. Kovsh, Ru-Shang Hsiao, L. P. Chen, Jenn-Fang Chen, T. S. Lay, J. Y.
Journal of Crystal Growth

References

YearCitations

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