Ru-Shang Hsiao - Concepedia

Author

Ru-Shang Hsiao

Industrial Technology Research Institute

Also Known As

R Hsiao, R S Hsiao, R. Hsiao, R. S. Hsiao, R.S. Hsiao, Ru-Shang Hsiao

Publications

462

Citations

H-Index

Concepts

All Affiliations

Industrial Technology Research Institute National Yang Ming Chiao Tung University Chung Yuan Christian University ITRI International Physico-Technical Institute

About

Ru-Shang Hsiao is an author at Industrial Technology Research Institute specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	16	335
2	Applied Physics	13	16	335
3	Physics	11	11	197
4	Materials Science	6	6	99
5	Electrical Engineering	4	4	61

Ru-Shang Hsiao

Publications

351

Citations

H-Index

Page 1

	Year	Citations
1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE Hsin-Chieh Yu, J.S. Wang, Y.K. Su, IEEE Photonics Technology Letters Quantum PhotonicsOptical MaterialsEngineeringLaser ScienceCavity Qed	2006	46
Single-mode monolithic quantum-dot VCSEL in 1.3 /spl mu/m with sidemode suppression ratio over 30 dB Y.H. Chang, Peng‐Chun Peng, W. K. Tsai, IEEE Photonics Technology Letters Photonic DevicePhotonicsQuantum PhotonicsEngineeringQuantum Device	2006	41
Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots Jyh-Shyang Wang, Ru-Shang Hsiao, Jenn-Fang Chen, IEEE Photonics Technology Letters Quantum PhotonicsEngineeringLaser ApplicationsLaser MaterialHigh-power Lasers	2005	26
Singlemode InAs quantum dot photonic crystal VCSELs H.P. Yang, Y. H. Chang, Fang‐I Lai, Electronics Letters Quantum SciencePhotonicsQuantum PhotonicsQd Phc-vcselEngineering	2005	25
Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs H-P D Yang, Chao Lü, Ru-Shang Hsiao, Semiconductor Science and Technology Semiconductor TechnologyPhotonicsElectrical EngineeringMbe-grown IngaEngineering	2005	20
Strain relaxation in InAs∕InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling J. F. Chen, Ru-Shang Hsiao, Y. P. Chen, Applied Physics Letters Materials SciencePhotoluminescenceEngineeringPhysicsNanoelectronics	2005	20
Characterization of self-assembled InAs quantum dots with InAlAs∕InGaAs strain-reduced layers by photoluminescence spectroscopy Kuang-Po Chang, Shyuan Yang, Der-San Chuu, Journal of Applied Physics Thin Inalas SrlEngineeringColloidal NanocrystalsLuminescence PropertySemiconductor Nanostructures	2005	20
High nitrogen content InGaAsN/GaAs single quantum well for 1.55μm applications grown by molecular beam epitaxy J. S. Wang, A. R. Kovsh, Ru-Shang Hsiao, Journal of Crystal Growth EngineeringPhysicsQuantum DeviceApplied PhysicsMolecular Beam Epitaxy	2003	19
Strain relaxation and induced defects in InAsSb self-assembled quantum dots J. F. Chen, Ru-Shang Hsiao, Wen-li Huang, Applied Physics Letters Materials ScienceSemiconductorsIi-vi SemiconductorEngineeringPhysics	2006	19
Characteristics of InGaAs Submonolayer Quantum-Dot and InAs Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers Hung-Pin D. Yang, I-Chen Hsu, Ya-Hsien Chang, Journal of Lightwave Technology PhotonicsQuantum PhotonicsInas Qd Phc-vcselEngineeringOptical Properties	2008	19

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