Ru-Shang Hsiao

1.3-/spl mu/m InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE

Hsin-Chieh Yu, J.S. Wang, Y.K. Su et al. · IEEE Photonics Technology Letters · 2006 · 46 citations

Quantum Photonics, Optical Materials, Engineering +16

Single-mode monolithic quantum-dot VCSEL in 1.3 /spl mu/m with sidemode suppression ratio over 30 dB

Y.H. Chang, Peng‐Chun Peng, W. K. Tsai et al. · IEEE Photonics Technology Letters · 2006 · 41 citations

Photonic Device, Photonics, Quantum Photonics +14

Engineering laser gain spectrum using electronic vertically coupled InAs-GaAs quantum dots

Jyh-Shyang Wang, Ru-Shang Hsiao, Jenn-Fang Chen et al. · IEEE Photonics Technology Letters · 2005 · 26 citations

Quantum Photonics, Engineering, Laser Applications +19

Singlemode InAs quantum dot photonic crystal VCSELs

H.P. Yang, Y. H. Chang, Fang‐I Lai et al. · Electronics Letters · 2005 · 25 citations

Quantum Science, Photonics, Quantum Photonics +12

Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs

H-P D Yang, Chao Lü, Ru-Shang Hsiao et al. · Semiconductor Science and Technology · 2005 · 20 citations

Semiconductor Technology, Photonics, Electrical Engineering +15