IEEE Photonics Technology Letters · 2006 · 46 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsLaser DiodesQuantum DotsSemiconductor Device MaterialsSemiconductor LasersHigh-power Semiconductor LasersMetal-metal ContactsMolecular Beam EpitaxyOhmic ContactsQuantum Dot LasersSemiconductor Laser FabricationVertical-cavity Surface-emitting LasersWaveguiding
We report InAs-InGaAs quantum-dot vertical-cavity surface-emitting lasers (VCSELs) grown by molecular beam epitaxy with fully doped n- and p-doped AlGaAs distributed Bragg reflectors and including an AlAs layer to form a current and waveguiding aperture. The metal contacts are deposited on a topmost p/sup +/-GaAs contact layer and on the bottom surface of the n/sup +/-GaAs substrate. This conventional selectively oxidized top-emitting device configuration avoids the added complexity of fabricating intracavity or coplanar ohmic contacts. The VCSELs operate continuous-wave at room temperature with peak output powers of 0.33 mW and differential slope efficiencies up to 0.23 W/A. The peak lasing wavelengths are near 1.275 μm, with a sidemode suppression ratio of 28 dB.
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InAs-InGaAs quantum dot VCSELs on GaAs substratesemitting at 1.3 µm
James A. Lott, N. N. Ledentsov, V. M. Ustinov et al. · Electronics Letters · 2000 · 265 citations