Applied Physics Letters · 1987 · 118 citations · 14 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAmorphous MaterialsAmorphous SemiconductorsAmorphous SolidsOptoelectronic MaterialsSemiconductor Device MaterialsSemiconductor PhysicsAmorphous CarbonAmorphous GermaniumAmorphous SiliconCarrier Material QualityHydrogenated Amorphous SiliconSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Device Materials
We introduce a parameter obtained from infrared measurements as a means of quantifying the amount of amorphous silicon microstructure and its degree of passivation by hydrogen. Using this parameter, the photoconductivities of amorphous silicon (a-Si:H), amorphous silicon carbon (a-SiC:H), and amorphous silicon germanium (a-SiGe:H) fall on the same curve. We discuss the relevance of these results with regard to material quality.
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Vibrational Spectra of Hydrogen in Silicon and Germanium
M. Cardona · physica status solidi (b) · 1983 · 533 citations
Infrared Spectrum and Structure of Hydrogenated Amorphous Silicon
H. R. Shanks, C. J. Fang, L. Ley et al. · physica status solidi (b) · 1980 · 509 citations