Liquid Injection MOCVD of Zirconium Dioxide Using a Novel Mixed Ligand Zirconium Precursor

Abstract

Thin films of ZrO2 have been deposited by liquid injection MOCVD using tetrahydrofuran solutions of the novel mixed ligand precursor Zr2(OiPr)6(thd)2 (thd = 2,2,6,6,-tetramethyl-3,5-heptanedionate). Oxide growth was observed over an unusually wide range of temperatures from 250°C to at least 600°C. Optimized growth of ZrO2 occurred between 350°C and 550°C, which is considerably lower than the optimum temperature for deposition from the conventional Zr(thd)4 precursor. Analysis of the films by Auger electron spectroscopy showed that carbon was present at levels of between ∼2 at.-% and 11 at.-%, depending on substrate temperature and oxygen concentration in the gas phase.