Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy

Abstract

Hexagonal GaN ( h -GaN) films are grown on GaAs (100) vicinal substrates by hydride vapor phase epitaxy. The substrate misorientation dependence of the crystal structure is investigated by X-ray diffraction measurements using a 4-circle diffractometer. It is found that misorientation toward the <111> B direction is essential for the growth of single domain h -GaN films and that the c -axis of the single domain h -GaN orients to the GaAs <111> B direction.