Lattice parameters and Raman-active phonon modes of (In<i>x</i>Ga1–<i>x</i>)2O3 for <i>x</i> &amp;lt; 0.4

Abstract

We present X-ray diffraction and Raman spectroscopy investigations of (InxGa1–x)2O3 thin films and bulk-like ceramics in dependence of their composition. The thin films grown by pulsed laser deposition have a continuous lateral composition spread allowing the determination of phonon mode properties and lattice parameters with high sensitivity to the composition from a single 2-in. wafer. In the regime of low indium concentration, the phonon energies depend linearly on the composition and show a good agreement between both sample types. We determined the slopes of these dependencies for eight different Raman modes. While the lattice parameters of the ceramics follow Vegard's rule, deviations are observed for the thin films. Further, we found indications of the high-pressure phase InGaO3 II in the thin films above a critical indium concentration, its value depending on the type of substrate.