Applied Physics Letters · 2009 · 392 citations · 28 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsDopingIii-v SemiconductorsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsAtomic SizeConductivityElectronic Structure AnalysisImpurity StatesIonizationIonization EnergyP-type ConductivityP-type Doping
Based on electronic structure and atomic size considerations, nitrogen has been regarded as the most suitable impurity for p-type doping in ZnO. However, numerous experimental efforts by many different groups have not resulted in stable and reproducible p-type material, casting doubt on the efficacy of nitrogen as a shallow acceptor. Based on advanced first-principles calculations we find that nitrogen is actually a deep acceptor, with an exceedingly high ionization energy of 1.3 eV, and hence cannot lead to hole conductivity in ZnO. In light of this result, we reexamine prior experiments on nitrogen doping of ZnO.
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Generalized Gradient Approximation Made Simple
John P. Perdew, Kieron Burke, Matthias Ernzerhof · Physical Review Letters · 1996 · 211.5K citations · Full text
Natural Sciences, Chemistry, Physics +16