Line edge roughness and photoresist percolation development model

Abstract

In this article we present a three-dimensional dissolution percolation model based on the percolation concept and on the propagation of a front over a regular lattice of cells. The model describes the development process of the chemically amplified resists like UV-6. It is shown that, starting from this model, normalized resist thickness and dissolution rate can be characterized, line/space pattern may be generated, then line edge roughness and developing surface roughness can be analyzed and predicted in a statistical sense. There is a good agreement in the trends between our simulation results and experimental data.