Growth of InN by Chloride-Transport Vapor Phase Epitaxy

Abstract

Hexagonal single crystalline InN film are grown on a hexagonal-GaN epitaxial layer in a GaAs(100) substrates by chloride-transport vapor phase epitaxy. It is found that lower temperatures for the upstream region of the reator, where indium chloride is generated, are crucial for InN growth. In addition, the use of inert gas such as nitrogen, is necessary for growth. Based on these results, the necessity of InCl 3 as a source material is emphasized for InN growth. The grown film reveals a hexagonal structure whose c -axis orients to the GaAs<111>B direction.