Properties of CdTe/InSb heterostructures prepared by molecular beam epitaxy

Abstract

Properties of CdTe/InSb heterostructures grown on (111)B InSb substrates by molecular beam epitaxy are reported. X-ray diffraction and uv reflectance measurements were used to judge the quality of epitaxy for layers grown under various conditions. Auger depth profile analysis revealed a sharp CdTe/InSb interfacial region of less than 250 Å for depositions at 220 °C. Detailed capacitance-voltage measurements yielded interface-state densities of 1.4–2.8×1011 cm−2 eV−1 (near midgap) for these preliminary samples, indicating that improved metal-insulator-semiconductor structures on InSb may be possible using this lattice-matched heterojunction surface passivation scheme.