Application of Solid Phase Epitaxy for Measuring Dangling Bond Densities and Impurity Ionization in Amorphous Silicon

Electronic properties of substitutionally doped amorphous Si and Ge

W. E. Spear, P. G. Le Comber · Philosophical magazine · 1976 · 715 citations

Natural Sciences, Materials Science, Physics +17

Kinetics of motion of crystal-melt interfaces

F. Spaepen, David Turnbull · AIP conference proceedings · 1979 · 105 citations

Natural Sciences, Materials Engineering, Materials Science +17

A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous silicon

G. M�ller, S. Kalbitzer, H. Mannsperger · Applied Physics A · 1986 · 91 citations

Engineering, Materials Engineering, Materials Science +16

Amorphous silicon produced by ion implantation: Effects of ion mass and thermal annealing

C.N. Waddell, W. G. Spitzer, J. E. Fredrickson et al. · Journal of Applied Physics · 1984 · 53 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ionization-enhanced solid phase epitaxy of amorphous silicon with boron impurities

Won Woo Park, MF Becker, R. M. Walser · Applied Physics Letters · 1988 · 21 citations

Natural Sciences, Materials Science, Physics +17