G. M�ller - Concepedia

Author

G. M�ller

Max Planck Institute for Nuclear Physics

Also Known As

G. M�ller, Gregor M�ller

Publications

558

Citations

H-Index

Concepts

All Affiliations

Max Planck Institute for Nuclear Physics Technical University of Munich Max Planck Society Messerschmitt-Bölkow-Blohm (Germany)Schott (Germany)

About

G. M�ller is an author at Max Planck Institute for Nuclear Physics specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	449
2	Applied Physics	9	9	440
3	Medicine	1	1	70
4	Cellular Physiology	1	1	70
5	Chemistry	1	1	91

G. M�ller

Publications

530

Citations

H-Index

Page 1

	Year	Citations
High-Electron-Mobility AlGaN/GaN Transistors (HEMTs) for Fluid Monitoring Applications R. Neuberger, G. M�ller, O. Ambacher, physica status solidi (a) Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesDifferent PolarityEngineering	2001	128
A chemical-bond approach to doping, compensation and photo-induced degradation in amorphous silicon G. M�ller, S. Kalbitzer, H. Mannsperger Applied Physics A EngineeringApplied PhysicsChemical-bond ApproachAmorphous SiliconSemiconductor Material	1986	91
Semi-insulating electrical properties of undoped inp after heat treatment in a phosphorus atmosphere Dieter Hofmann, G. M�ller, N. Streckfu� Applied Physics A Materials ScienceElectrical EngineeringEngineeringSemi-insulating Electrical PropertiesApplied Physics	1989	90
Effects of inorganic phosphate on the contractile mechanism J. C. R�egg, M. Sch�dler, G. J. Steiger, Pflügers Archiv - European Journal of Physiology BiomechanicsPhysiologyBioceramicMedicineCellular Physiology	1971	70
Electric and magnetic hyperfinestructure investigations in the 5s 25p 3 and 5s 25p 26s Configurations of121, 123Sb Bruce A. Buchholz, H.‐D. Kronfeldt, G. M�ller, The European Physical Journal A MagnetismEngineeringPhysicsMagnetic Hyperfinestructure InvestigationsApplied Physics	1978	36
Ion-Induced Modulation of Channel Currents in AlGaN/GaN High-Electron-Mobility Transistors R. Neuberger, G. M�ller, O. Ambacher, physica status solidi (a) Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device	2001	33
Surface and volume decay processes in semiconductors studied by contactless transient photoconductivity measurements M. Kunst, G. M�ller, R. Schmidt, Applied Physics A SemiconductorsElectrical EngineeringEngineeringPhysicsVolume Decay	1988	28
An integrated approach for the determination of regionale vapotranspiration using mesoscale modelling, remote sensing and boundary layer measurements Péter Braun, Bill Maurer, G. M�ller, Meteorology and Atmospheric Physics ClimatologyMeteorologyBoundary Layer MeasurementsAtmospheric ConditionEngineering	2001	20
Optical absorption and electronic transport in ion-implantation-doped polycrystalline SiC films W. Hellmich, G. M�ller, G. Kr�tz, Applied Physics A Materials ScienceSemiconductor TechnologyIon ImplantationOptical MaterialsEngineering	1995	12
Accumulation and annealing of implantation damage in a-Si:H H. Stitzl, G. Kr�tz, G. M�ller Applied Physics A Materials EngineeringMaterials ScienceIon ImplantationEngineeringApplied Physics	1991	11

Page 1