All-Copper Chip-to-Substrate Interconnects Part I. Fabrication and Characterization

Abstract

A fabrication process has been developed and characterized to create all-copper chip-to-substrate input/output connections. Electroless copper plating followed by low-temperature annealing in a nitrogen environment was used to create an all-copper bond between copper pillars. The ability to fuse the two copper surfaces at modest temperature and pressure is demonstrated. The bond strength for the all-copper structure exceeded after annealing at . During the anneal process, a significant microstructural transformation in the bonded copper–copper interface was observed. The changes were correlated to an increase in the bond strength. The process was characterized with respect to in-plane misalignment of bond sites. Significant planar misalignment, greater than the diameter of the pillars, could be tolerated. Through-plane mismatches between the pillars (pillar gap) as large as could be overcome, resulting in good pillar-to-pillar bonding. Successful silicon-on-silicon and silicon-on-FR-4 bonding was achieved with no degradation of the organic board.