Studies on the interface between novel type ZnO and p-a-SiC:H in 1.5 eV a-SiGe:H pin diodes in comparison to SnOx and ITO

Computer simulation model of the effects of interface states on high-performance amorphous silicon solar cells

H. Tasaki, W. Y. Kim, M. Hallerdt et al. · Journal of Applied Physics · 1988 · 112 citations

Engineering, Electrical Engineering, Materials Science +17

Barrier at the interface between amorphous silicon and transparent conducting oxides and its influence on solar cell performance

F. Sánchez‐Sinencio, Richard M. Williams · Journal of Applied Physics · 1983 · 82 citations

Engineering, Materials Engineering, Materials Science +17

<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces

B. Drévillon, Satyendra Kumar, Pere Roca i Cabarrocas et al. · Applied Physics Letters · 1989 · 80 citations

Engineering, Materials Engineering, Materials Science +17

Amorphous silicon semiconductors-pure and hydrogenated

A. Madan, M. O. Thompson, David Adler et al. · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 1987 · 51 citations

Engineering, Materials Engineering, Materials Science +17

Auger electron and x-ray photoelectron spectroscopy analysis of the hydrogenated amorphous silicon-tin oxide interface: Evidence of a plasma-induced reaction

J. H. Thomas, A. Catalano · Applied Physics Letters · 1983 · 33 citations

Natural Sciences, Chemistry, Materials Science +17