Applied Physics Letters · 1979 · 17 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor Thin FilmsSolar CellsAnodic OxidationAntireflection CoatingsHeterojunctionsMetallizationMolecular Beam EpitaxyP-n Junction Solar CellsSingle-crystal SemiconductorsSolar Cell Fabrication
Conversion efficiencies up to 16% at AM1 have been obtained for molecular beam epitaxy (MBE) GaAs solar cells utilizing a shallow-homojunction n+/p/p+ structure without a GaAlAs window. The n+, p, and p+ GaAs layers were all grown by MBE on single-crystal p+ GaAs substrates. Cell metallization was performed by electroplating, and an antireflection coating was formed by anodic oxidation of the n+ layer. These cells are the first efficient MBE solar cells of any type to be reported.
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