Detection of terahertz radiation by tightly concatenated InGaAs field-effect transistors integrated on a single chip

Abstract

A tightly concatenated chain of InGaAs field-effect transistors with an asymmetric T-gate in each transistor demonstrates strong terahertz photovoltaic response without using supplementary antenna elements. We obtain the responsivity above 1000 V/W and up to 2000 V/W for unbiased and drain-biased transistors in the chain, respectively, with the noise equivalent power below 10−11 W/Hz0.5 in the unbiased mode of the detector operation.