Physical Review Letters · 1992 · 70 citations · 12 references
EngineeringPhysicsCondensed Matter PhysicsOptoelectronicsSemiconductor MaterialsElectron TransportOptical Properties Of SemiconductorsSemiconductor PhysicsThermal Properties Of SemiconductorsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBoltzmann DistributionConductionElectron DensityElectron Density DistributionsElectron KineticsElectron ThermalizationMaxwell-boltzmann StatisticsTotal Cross Sections
We have observed the thermalization of conduction electrons in GaAs from a Gaussian to a Maxwell-Boltzmann distribution, by time-resolved observation of the band-to-acceptor luminescence folllowing a short (5 ps) near-resonant laser pulse of very low excitation power. At electron density less than ${10}^{14}$/${\mathrm{cm}}^{3}$ the thermalization of the electron density distribution occurs on a time scale of 50 ps with a rate independent of density. At higher density, thermalization occurs via electron-electron scattering with a total cross section of approximately 6\ifmmode\times\else\texttimes\fi{}${10}^{\mathrm{\ensuremath{-}}12}$ ${\mathrm{cm}}^{2}$.
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Optical Transitions Involving Impurities in Semiconductors
W. P. Dumke · Physical Review · 1963 · 259 citations
Femtosecond Carrier Thermalization in Dense Fermi Seas
Wayne H. Knox, D. S. Chemla, G. Livescu et al. · Physical Review Letters · 1988 · 240 citations