The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniques

THE HEATS OF FORMATION OF SOME UNSTABLE GASEOUS HYDRIDES¹

Stuart R. Gunn, LeRoy G. Green · The Journal of Physical Chemistry · 1961 · 187 citations

Natural Sciences, Chemistry, Heat Transfer +5

Surface Processes in the Growth of Silicon on (111) Silicon in Ultrahigh Vacuum

Henry C. Abbink, R. M. Broudy, G. P. McCarthy · Journal of Applied Physics · 1968 · 169 citations

Natural Sciences, Materials Engineering, Materials Science +17

A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviour

B.A. Joyce, R. R. Bradley, G. R. Booker · Philosophical magazine · 1967 · 133 citations

Natural Sciences, Chemistry, Materials Science +17

The influence of substrate surface conditions on the nucleation and growth of epitaxial silicon films

B.A. Joyce, J.H. Neave, B.E. Watts · Surface Science · 1969 · 90 citations

Natural Sciences, Materials Engineering, Materials Science +14

A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques

G. R. Booker, B.A. Joyce · Philosophical magazine · 1966 · 87 citations

Natural Sciences, Chemistry, Materials Science +17