Ge thin film growth on Si(111) surface using hydrogen surfactant

Ideal hydrogen termination of the Si (111) surface

G. S. Higashi, Yves J. Chabal, Gary W. Trucks et al. · Applied Physics Letters · 1990 · 1.4K citations

Natural Sciences, Chemistry, Materials Science +17

Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffraction

Kunio Takayanagi, Y. Tanishiro, Shigeki Takahashi et al. · Surface Science · 1985 · 1.1K citations

Natural Sciences, Materials Science, Physics +14

Surfactants in epitaxial growth

M. Copel, M. C. Reuter, Efthimios Kaxiras et al. · Physical Review Letters · 1989 · 1.1K citations

Engineering, Materials Engineering, Materials Science +17

The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etching

Takayuki Takahagi, Ichiro Nagai, A. Ishitani et al. · Journal of Applied Physics · 1988 · 495 citations

Engineering, Materials Engineering, Materials Science +17

Influence of surfactants in Ge and Si epitaxy on Si(001)

M. Copel, M. C. Reuter, M. Horn von Hoegen et al. · Physical review. B, Condensed matter · 1990 · 345 citations

Engineering, Materials Engineering, Materials Science +17