Effects of Surface Treatments on Interfacial Self-Cleaning in Atomic Layer Deposition of Al[sub 2]O[sub 3] on InSb

Abstract

The atomic layer deposition (ALD) of using trimethylaluminum (TMA) as a metal precursor on an InSb substrate with or without surface pretreatments was investigated. It was found that both in situ TMA/Ar purging (half-ALD cycle) and ex situ CP4A chemical etching can remove the native oxides on InSb before ALD of , and lead to a native-oxides-free structure. Characteristics of current density–voltage and capacitance–voltage were also investigated to evaluate the insulative and interface quality in a metal-oxide-semiconductor structure.