Total Dose Characterizations of CMOS Devices in Oxygen Implanted Silicon-on-Insulator

Abstract

The total dose characteristics of CMOS devices fabricated in oxygen implanted buried oxide silicon-on-insulator (SOI) substrates with different post-implant annealing processes are studied. The threshold voltage shift, subthreshold slope degradation and mobility degradation of front channel SOI/CMOS devices are measured to be the same as those of bulk devices processed identically. Negative substrate bias lowers the threshold voltage shift of back channel SOI transistors, while not affecting the front channel characteristics. Under present processing conditions, the radiation characteristics of front channel devices are independent of the postoxygen-implant annealing temperature. Oxygen precipitates at the silicon/buried oxide interface enhance interface state generation of the back channel devices during irradiation.