Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique - Concepedia

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Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique

74

Citations

10

References

2014

Year

Kazuhiko Kusunoki, Nobuhiro Okada, Kazuhito Kamei, Koji Moriguchi, Hironori Daikoku, Motohisa Kado, Hidemitsu Sakamoto, Takeshi Bessho, Toru Ujihara

Journal of Crystal Growth

Materials EngineeringMaterials ScienceEngineeringMechanical EngineeringTop-seeded Solution GrowthStructural CeramicHeat TransferCarbide

References

	Year	Citations

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