Japanese Journal of Applied Physics · 1983 · 13 citations · 4 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor MaterialsSurface EngineeringSurface ScienceAmorphous Electronic MaterialsAmorphous SemiconductorsSemiconductor Device MaterialsSemiconductor SurfacesSilicon MaterialsSurface PassivationAmorphous SiliconBlockingBlocking PropertiesHydrogenated Amorphous SiliconPassivation Of Silicon SurfacesSilicon PassivationSurface Passivation LayersSurface Potential
A new multilayered amorphous silicon photoreceptor drum has been developed by means of glow discharge method. Its structure was Al/a-Si: H(p)/a-Si: H(i)/a-SiC: H. The a-Si: H(p) and a-SiC: H act as a blocking layer for electron and hole respectively. The a-SiC: H layer also proved to be an excellent surface passivation layer. The a-Si: H(i) layer was deposited at a rate of ∼12 µm/h by the high power decomposition of a high flow rate pure silane. Excellent electrophotographic properties were obtained: initial surface potential ∼600 V for +7 kV corona, dark half decay time ∼5 sec and photosensitivity ∼0.5 µJ/cm 2 at λ=632.8 nm.
4