High-Rate Deposition of a-Si: H Film Using the Decomposition of Mono-Silane

Abstract

High-rate deposition technique of a-Si: H films for an electrophotographic photoreceptor using a glow discharge decomposition of SiH 4 is described. The deposition parameters are optimized on the basis of results that the emission intensity ratio of the species H to SiH in the plasma is a function of the rf power and flow rate of SiH 4 by which a hydrogen bonding state in the resultant film is controlled. An a-Si: H film with a suitable hydrogen bonding state for excellent electrophotographic properties is prepared at the high deposition rate of 5 µm/h. It is also found that the deposition rate is proportional to the emission intensity of SiH.