Publication | Closed Access
Properties of Amorphous Films Prepared from SiH<sub>4</sub>–N<sub>2</sub>–H<sub>2</sub> Gas Mixture
40
Citations
8
References
1982
Year
EngineeringOptoelectronic DevicesThin Film Process TechnologyChemistryAmorphous MaterialsSemiconductorsElectronic DevicesOptical PropertiesSih 4Thin Film ProcessingMaterials SciencePhotoluminescenceOptoelectronic MaterialsMole FractionAmorphous Films PreparedSemiconductor MaterialElectronic MaterialsSurface ScienceApplied PhysicsThin FilmsAmorphous SolidOptoelectronicsEfficient Doping
The electrical properties and the IR absorption spectra of amorphous films made by the glow-discharge of a SiH 4 –N 2 –H 2 gas mixture have been investigated as a function of the nitrogen to silane mole fraction. Efficient doping is possible in these amorphous films. The highest resistivity obtained is 1×10 14 Ω·cm, which is sufficient to be used as a photoreceptor of electrophotography.
| Year | Citations | |
|---|---|---|
Page 1
Page 1