Japanese Journal of Applied Physics · 1982 · 40 citations · 8 references
Natural SciencesChemistryMaterials ScienceMaterials ChemistrySemiconductor MaterialsThin FilmsAmorphous Electronic MaterialsAmorphous MaterialsAmorphous SemiconductorsAmorphous SolidsElectronic Material CharacterizationThin Film Electrical PropertiesAbsorption SpectraAmorphous Semiconductor FilmsAmorphous Thin FilmsElectrical PropertiesElectrical Properties AnalysisInfrared Absorption SpectraResistivitySemiconductor Doping
The electrical properties and the IR absorption spectra of amorphous films made by the glow-discharge of a SiH 4 –N 2 –H 2 gas mixture have been investigated as a function of the nitrogen to silane mole fraction. Efficient doping is possible in these amorphous films. The highest resistivity obtained is 1×10 14 Ω·cm, which is sufficient to be used as a photoreceptor of electrophotography.
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Infrared Spectrum and Structure of Hydrogenated Amorphous Silicon
H. R. Shanks, C. J. Fang, L. Ley et al. · physica status solidi (b) · 1980 · 509 citations