VIA-6 novel low-loss and high speed diode utilizing an "IDEAL" ohmic contact

Abstract

A new electrode structure, the Universal Contact, is proposed as an "ideal" ohmic contact for a semiconductor. An excellently low-loss power rectifier with fast recovery is realized by utilizing this contact. A mosaic layer with a checkerboard p+ and n+ pattern is inserted between contact metal and semiconductor instead of the conventional heavily doped layer. The Universal Contact (UC) is permeable to both minority and majority carriers, since the minority carrier recombination velocity is infinitely high at UC surface. Carrier stagnation and accumulation become negligibly small, so that low loss and high speed characteristics are realized.