Wide angle beam ellipsometry for extremely large samples

Abstract

Abstract Our aim was to make possible to use ellipsometry for mapping purposes during one measuring cycle even on large wafers or panels (several dm 2 area). The new technique (Patent pending: P0700366, 2007 [1]) (based on our wide‐angle beam ellipsometry solution) uses non‐collimated illumination with special mirror arrangement giving multiple‐angle‐of‐incidence information. The prototype uses a so called RGB‐laser (658, 532, 474 nm) as light source. The detection is almost without background. One rapid measuring cycle is enough to determine the polarization state at all the points inside the illuminated area. The collected data can be processed very fast providing nearly real‐time thicknesses and/or refractive index maps over a large (several dm 2 ) area of the sample surface even in the case of multi‐layer samples. The method can be used for mapping (quality) control purposes in the case of large area solar cell table production lines even in vacuum chamber with 5‐10 mm lateral resolution. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)