Electronics Letters · 1987 · 12 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsOptoelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignOptoelectronic DevicesPhotodetectorsBit Error RateBit-error Rate AnalysisHeterojunction PhotodetectorsHeterostructure OptoelectronicsHeterostructure PhotodetectorsIntegrated PhotodetectorsPhotodetectionWord Error Rate
A new integrated PIN/JFET using an original three-layer GalnAs structure has been developed in order to optimise both devices separately. Thanks to the good performances and high reliability of individual components, the sensitivity of such monolithic photoreceivers is — 33.7 dBm for a 10−9 bit error rate at 140 Mbit/s.
2
A planar InGaAs PIN/JFET fiber-optic detector
K. Ohnaka, Kyo Inoue, Tetsuya Uno et al. · IEEE Journal of Quantum Electronics · 1985 · 21 citations