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Full C-band tunable high fibre output power electroabsorption modulator integrated with semiconductor optical amplifier
14
Citations
5
References
2003
Year
PhotonicsElectrical EngineeringSemiconductor Optical AmplifierOptical AmplificationEngineeringOptical Transmission SystemOptical PropertiesFibre AmplifierPhotonic Integrated CircuitBias TuningDispersion PenaltyElectro-optics DeviceOptoelectronicsFiber-optic CommunicationOptical AmplifierFull C-bandFiber Optic
The 10 Gbit/s high power output InGaAsP multiple-quantum well electroabsorption modulator, which can be tunable in the full C-band, is demonstrated. The semiconductor optical amplifier is integrated to compensate for optical losses. Operation over the full C-band, which ranges from 1530 to 1565 nm, is obtained using temperature and bias tuning. Under these operating conditions, modulated fibre output power as high as +4 dBm, dynamic extinction ratio exceeding 8.5 dB, and dispersion penalty of less than 2 dB for 1600 ps/nm of fibre, are achieved across the entire band.
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