Strained InGaAs/InAlAs MQW electroabsorption modulators with large bandwidth and low driving voltage

Abstract

We demonstrate the improved modulation properties of a new strained InGaAs/InAlAs MQW electro-absorption modulator. This tensile strained MQW modulator shows low driving voltage (V/sub 15 dB/=1.2 V), large modulation bandwidth (f/sub 3 dB/>20 GHz), and a 10 Gbit/s eye pattern with a clear eye opening and high extinction ratio. The effective /spl alpha/ parameter determined from waveform deterioration is 0.6, which is low enough for multigigabit long-haul fiber transmission systems.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>