Won-Jin Choi

GaN growth on Si(111) substrate using oxidized AlAs as an intermediate layer

Nobuhiko P. Kobayashi, J. T. Kobayashi, P.D. Dapkus et al. · Applied Physics Letters · 1997 · 83 citations

Engineering, Materials Engineering, Materials Science +14

1.2-μm GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor deposition

Won-Jin Choi, P.D. Dapkus, J. L. Jewell · IEEE Photonics Technology Letters · 1999 · 64 citations

Engineering, Materials Engineering, Materials Science +17

Low insertion loss and low dispersion penalty InGaAsP quantum-well high-speed electroabsorption modulator for 40-Gb/s very-short-reach, long-reach, and long-haul applications

Won-Jin Choi, A.E. Bond, Jong-Woo Kim et al. · Journal of Lightwave Technology · 2002 · 37 citations

Engineering, Electrical Engineering, Materials Science +17

Hetero-integration enables fast switching time-of-flight sensors for light detection and ranging

Minseong Park, Yongmin Baek, Mesgana Dinare et al. · Scientific Reports · 2020 · 27 citations · Full text

Engineering, Biomedical Engineering, Electrical Engineering +17

High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules

Newton C. Frateschi, J. Zhang, Won-Jin Choi et al. · Electronics Letters · 2004 · 24 citations

Engineering, Electrical Engineering, Optoelectronics +16