High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules

Abstract

Long reach C-band 10 Gbit/s uncooled operation of laser integrated to InGaAlAs electroabsorption modulator packages is presented. Using a design employing InGaAlsAs multi-quantum wells (MQW), uncooled operation over an 80°C temperature range, with modulated output power in excess of 0 dBm, 1.7 dB maximum change in extinction ratio, and with a dispersion penalty of 1 dB for 1600 ps/nm propagation is demonstrated.