Interface-state parameter determination by deep-level transient spectroscopy

Abstract

A modification of the deep-level transient spectroscopy (DLTS) technique for determination of interface-state parameters is described. In this technique, the surface potential dependence of the interface-state emission signal in a MOS capacitor was used to determine the energy of the emitting states. The technique allows accurate determination of majority-carrier cross section and interface-state density as functions of energy in the gap. Experimental results are presented for n- and p-type MOS capacitors on n 〈100〉 silicon.