Physical review. B, Solid state · 1970 · 46 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsDopingIii-v SemiconductorsOptical Properties Of SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsEffective MassEffective Mass ApproximationFar-infrared SpectroscopyGround State PropertiesIonizationOptical Gain In SemiconductorsPhotoconductivitySemiconductor Characterization
Donor-state absorption and photoconductivity spectra of $n$-type epitaxial GaAs layers with carrier concentrations in the range ${10}^{14}$-${10}^{16}$/${\mathrm{cm}}^{3}$ are reported. The essentially effective-mass-like behavior of the impurity spectra is confirmed, and ionization energies of 6.08, 5.81, 5.89, and 6.10\ifmmode\pm\else\textpm\fi{}0.025 meV are reported for Ge, Si, Se, and S donors. The influence of impurity-banding upon the values of ${E}_{D}$ is considered. Central-cell corrections to donor ground-state energies are discussed.
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The transition to the metallic state
N. F. Mott · Philosophical magazine · 1961 · 1.2K citations
William Dunlap · Solid-State Electronics · 1965 · 321 citations