Publication | Closed Access
Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs 1-X Sb X alloys
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Citations
18
References
2011
Year
Wide-bandgap SemiconductorOptical MaterialsEngineeringBuffer LayersCarrier LifetimeSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorMolecular Beam EpitaxyEpitaxial GrowthMaterials ScienceCrystalline DefectsCarrier ConcentrationInassb Buffer LayerSemiconductor MaterialType-2 SlsApplied PhysicsThin FilmsOptoelectronics
GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs<sub>1-X</sub>Sb<sub>X</sub>epilayers with lattice constants up to 2.1 % larger than that of GaSb. The InAsSb buffer layer was used to grow InAs<sub>0.12</sub>Sb<sub>0.88</sub> layer on InSb. The structural and optical characterization of 1-μm thick InAs<sub>1-x</sub>Sb<sub>x</sub> layers was performed together with measurements of the carrier lifetime.
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