Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2011 · 31 citations · 18 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsMaterials PhysicsSemiconductor MaterialsDopingOptical Properties Of SemiconductorsOptical Properties Of SolidsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsAlloy SemiconductorsBuffer LayersCarrier ConcentrationCarrier LifetimeCarrier Lifetime MeasurementLattice ConstantsOptical CharacterizationSemiconductor Characterization
GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs<sub>1-X</sub>Sb<sub>X</sub>epilayers with lattice constants up to 2.1 % larger than that of GaSb. The InAsSb buffer layer was used to grow InAs<sub>0.12</sub>Sb<sub>0.88</sub> layer on InSb. The structural and optical characterization of 1-μm thick InAs<sub>1-x</sub>Sb<sub>x</sub> layers was performed together with measurements of the carrier lifetime.
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