Investigations on 40 MeV Li3+ ions irradiated GaN epilayers

Ion implantation into GaN

S. O. Kucheyev, J. S. Williams, S. J. Pearton · Materials Science and Engineering R Reports · 2001 · 413 citations

Engineering, Materials Engineering, Physics +6

Spatial distribution of the luminescence in GaN thin films

F. A. Ponce, D. P. Bour, Werner Götz et al. · Applied Physics Letters · 1996 · 361 citations

Natural Sciences, Materials Engineering, Materials Science +17

Zone-boundary phonons in hexagonal and cubic GaN

H. Siegle, G. Kaczmarczyk, L. Filippidis et al. · Physical review. B, Condensed matter · 1997 · 309 citations

Natural Sciences, Materials Science, Physics +16

Lattice damage produced in GaN by swift heavy ions

S. O. Kucheyev, H. Timmers, Jin Zou et al. · Journal of Applied Physics · 2004 · 93 citations · Full text

Natural Sciences, Materials Science, Physics +17

Three-step amorphisation process in ion-implanted GaN at 15 K

E. Wendler, A. Kamarou, E. Alves et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 2003 · 73 citations

Engineering, Materials Engineering, Materials Science +13