Stability of crystalline Gd₂O₃thin films on silicon during rapid thermal annealing

Abstract

We investigate the impact of rapid thermal anneals on structural and electrical properties of crystalline Gd2O3 layers grown on Si with different orientations. Due to additional oxygen from the annealing ambient, a structureless two-layer stack (silicon-oxide-like and silicate-like) between the silicon and the crystalline oxide will be formed. The degradation of layers can be significantly reduced by sealing the layer with a-Si prior to annealing. For the capped layers, the effective capacitance equivalent thickness increases only slightly even after a 1000 °C anneal.