2013 · 17 citations · 14 references
EngineeringComputer EngineeringElectrical EngineeringFault-tolerant ComputingMemoryMicroelectronicsDevice CharacterizationDevice ModelingDevice ReliabilityDevice SimulationMemory DevicesSemiconductor ReliabilityFlash Memory DevicesFlash Memory ReliabilityFloating-gate MemoryPhysical Model TestingRadiation EffectsRadiation Effects On ReliabilityRadiation-tolerant Semiconductor DevicesSoft Errors
This work reports the combined characterization at mountain altitude (on the ASTEP Platform at 2552 m) and at sea-level of more than ~50 Gbit of 90 nm NOR flash memories subjected to natural radiation (atmospheric neutrons). This wafer-level experiment evidences a limited impact of the terrestrial radiation at ground level on the memory SER evaluated without ECC. Experimental values are compared to estimations obtained from Monte Carlo simulation using the TIARA-G4 code combined with a physical model for charge loss in such floating-gate devices.
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